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Convertizo 36/8/2023 This can be accomplishedīecause the very short heating intervals (typically 1–2 ms) With a low thermal budget (e.g., plastic). Transient heating of thin films to several hundred degrees on substrates With a properly designed device stack, photonic curing can produce These processes often result in substantial substrate heating. The ability to cure and produce TFTs with photonic curing. Of pulses, pulse energy, and fire rate on TFT performance and demonstrated These reports have studied the effects of the number Photonic curing on both silicon 15− 17, 19, 27− 31 and glass substrates 18, 23− 25, 31 has been reported for various oxide semiconductorĬompositions. Offers the ability to rapidly process films at high temperatures, 15− 30 The latter, commonly known as photonic curing, is particularly advantageousĪs compared to conventional thermal annealing because photonic curing Some of the most popularĪre microwave annealing, 13 photochemicalĪctivation, 14 and pulsed-light processesīased on flashlamps. Processing methods for oxide semiconductors. Plastic substrates has driven an investigation into alternative thermal ☌ are required to decompose metal hydroxide bonds and form a Temperatures instead of the desired metal-oxide phase (M–O).įilms with significant hydroxide content exhibit poor electrical performanceĪnd do not yield high-quality TFTs. Metal hydroxide phase (M–OH) is often formed at low processing The sol–gel into the semiconducting oxide. High-temperature postdeposition annealing step is required to convert 9ĭespite these benefits, one limiting factor in the synthesisįabrication of sol–gel metal-oxide TFTs is that a relatively Range of deposition techniques such as spin coating, 4 dip coating, 7 ink-jet printing, 8 and spray coating. ![]() 4, 5 The solution-based nature of sol–gels also allows for a wide Of the synthesis and the ability to easily tune the film composition. ![]() Methods are the most commonly employed technique because of the simplicity Thin films, making these materials easy and cheap to produce. Well-developed wet-chemical synthesis techniques for amorphous oxide In particular, the metal cation composition of the semiconductor canīe used to adjust the mobility, on/off current ratio, and turn-on With a similar orbital configuration such as tin, zinc, and gallium. 1, 4− 6 Transistor performance can be controlled by incorporating materials 1− 3 These materials are particularly interesting as a replacement forĪmorphous silicon in thin-film transistors (TFTs) for display applicationsīecause oxide semiconductors often have mobilities 10–100× This is due to their unique electron orbital structure, in which theĬonduction band is made up of large, spherical s-orbitals. Oxide semiconductors are a unique group of materials thatĭemonstrate high field-effect mobility even in the amorphous phase. The past few decades due to their desirable electrical and optical Oxide semiconductors such as indium gallium zinc oxide (IGZO)Īnd indium zinc oxide (IZO) have received significant attention over The use of efficient gateĪbsorbers also allows for the reduction in the number of pulses and Over previous pulsed-light processing work. Precursors to the semiconducting metal-oxide phase during photonicĬuring is on par with thermal annealing, which is a significant improvement This is the best performanceĪnd highest metal-oxide conversion for photonically cured oxide TFTsĪchieved to date that does not significantly heat the entire thickness Mobility of 21.8 cm 2 V –1 s –1 and an I on/ I off ratio approaching 10 8, which exceeds the performance This process yields TFTs with a field-effect Gate absorbers and optimized pulse designs to efficiently and effectivelyĬure sol–gel films. Photonic curing metal-oxide semiconductors for high-performance TFTĪpplications are discussed, focusing on the importance of effective The requirements and design guidelines for Peak temperature of ∼590 ☌ while the back of the substrate Simulations indicate that the IZO film reaches a Using intense white light delivering radiant energy up to 6 J cm –2. Here, sol–gel indium zinc oxide (IZO)-based TFTs are photonicallyĬured with efficient gate absorbers requiring as few as five pulses The entire substrate rather than just the thin film at the surface. On photonically cured TFTs often results in significant heating of ![]() Thermal processing methods such as ultrashort processing time andĬompatibility with low-temperature substrates. Photonic curing offers advantages over conventional Curing is used to rapidly and effectivelyĬonvert metal-oxide sol–gels to realize high-quality thin-film
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